Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-05-03
1979-08-07
James, Andrew J.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 23, 307309, H01L 2722, H01L 2982, H01L 2996
Patent
active
041639863
ABSTRACT:
A high sensitivity, low noise, broad bandwidth, twin channel conduction Lorentz channel coupled semiconductive field sensor device is described. The conductive channels are configured to create exceptionally narrow, undepleted conduction zones of approximately filamentary form. The filamentary conductive channels so formed are provided with a common source at one end of each channel and a separate drain at the other end thereof. The independent drains are spaced apart by a narrow area of semiconductive material. Magnetic fields may be utilized to create a Lorentz voltage in a region between the two conductive channels to vary the amount of current received at the two drains by utilizing the depletion width modulation effects of the Lorentz voltage upon the boundaries defining the conductive channel portions. Modulation of the depletion zone widths and depths along the channel sides effectively move the streams of carriers and the conductive channel areas to conduct more current to one drain more than another. This develops a differential drain current balance which can be utilized to provide an output signal. Width and length criteria for defining the filamentary channel structures are described for the ultimate desired configuration and size which are to be obtained. As noted, operation of the device is based upon Lorentz voltage modulation of the width and depth of the depletion zone boundaries defining the conductive channel. The Lorentz voltage is created in an area of semiconductive material coupling the two filamentary channels. An increased signal output is obtained by reducing the width of the filamentary channels to eliminate excess carriers normally found in wide channel devices and, further, by making the depletion zones as large a portion of the total channel widths as can be obtained.
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IBM Technical Disclosure Bulletin; Hall Effect Device Feedback Circuit, vol. 13, No. 8, Jan. 1971, p. 2448.
Duffield Edward H.
International Business Machines - Corporation
James Andrew J.
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