Semiconductor device having electrodes and or interconnections o

Details Semiconductor device having electrodes and or interconnections o Semiconductor device having electrodes and or interconnections o

1987-05-13

1989-02-21

Carroll, J.

357 231, H01L 2348, H01L 2978

Patent

active

048070157

ABSTRACT:
A semiconductor device which is provided with an electrode and/or an interconnection made of a refractory metal film containing silicon oxide is disclosed. A refractory metal film containing silicon oxide has high capability of blocking penetration of ions and is suitable for being employed as a mask for forming a source and a drain of an MOS transistor by ion-implantation and as it has strong adhesion with an insulation film improves reliability of a semiconductor device.

REFERENCES:
patent: 4270236 (1981-05-01), Toyokura et al.
patent: 4344222 (1982-08-01), Bergeron et al.
patent: 4394673 (1983-07-01), Thompson et al.
patent: 4557036 (1985-12-01), Kyuragi et al.
patent: 4700215 (1987-10-01), McPherson
Yamoto et al, Semiconductor Device Transistor Meeting on Japanese Electrocommunication Society, SSBD 89-98, pp. 39-45.
C. Hu et al, "A Resistive-gated IGFET Tetrode," IEEE Transactions on Electron Devices, vol. ED-18 (1971) pp. 418-425.

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