Heterojunction and dual channel semiconductor field effect trans

Details Heterojunction and dual channel semiconductor field effect trans Heterojunction and dual channel semiconductor field effect trans

1987-06-25

1989-02-21

James, Andrew J.

357 58, 357 16, 357 4, H01L 2980

Patent

active

048069981

ABSTRACT:
A heterojunction semiconductor device which has a dual channel with a high mobility layer, a barrier layer and a low mobility layer. The barrier layer is thin enough for the carriers to pass from the low mobility layer to the high mobility layer by tunnel effect, during variations of the polarization electrical field of the dual channel. The device can be used as field effect transistors with a quick response time, without variation in the charge of the channel but with a variation in the mobility of the carriers; or as negative transconductance devices for oscillators or complementary transistors in integrated circuits.

REFERENCES:
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4558337 (1985-12-01), Sauniier et al.
patent: 4688061 (1987-08-01), Sakaki
Judaprawira et al., "Modulation-Doped MBE GaAs/N-Al.sub.x Ga.sub.1-x As MESFETs," IEEE Electron Device Letters, vol. EDl-2, No. 1, Jan. 1981, pp. 14-15.
Loreck et al., "Deep Level Analysis in (AlGa)As--GaAs MODFETs by Means of Low Frequency Noise Measurements," IEDM Tech. Digest, Dec. 5-7, 1983, pp. 107-110.
Sakaki, "Velocity-Modulation Transistor (VMT)--A New Field-Effect Transistor Concept," Japanese Journal of Applied Physics, vol. 21, No. 6, Jun. 1982, pp. 2381-2383.

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