Semiconductor device

Details Semiconductor device Semiconductor device

1987-07-14

1989-02-21

Edlow, Martin H.

357 16, 357 17, 357 4, H01L 2712, H01L 29161

Patent

active

048069949

ABSTRACT:
A semiconductor device having a superlattice composed of two kinds of semiconductor materials, wherein the lattice unit of said superlattice is composed of periodically laminated layers consisting of four or more kinds of thin layers which are different from each other in the combination of materials and thickness.

REFERENCES:
patent: 4163237 (1979-07-01), Dingle et al.
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4261771 (1981-04-01), Dingle
patent: 4558336 (1985-12-01), Chang
patent: 4607272 (1986-08-01), Osbourn
patent: 4620206 (1986-10-01), Ohta
W. T. Masselink et al., "Improved GaAs/AlGaAs Singe Quantum Wells . . . ", 320 App. Phy. Letters, 44 (1984), Feb. 4, N.Y., U.S.A.

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