Method of growth II-VI semiconducting compounds

Details Method of growth II-VI semiconducting compounds Method of growth II-VI semiconducting compounds

1991-08-20

1993-04-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156606, 156612, 156DIG72, 156DIG77, 148DIG64, H01L 21205

Patent

active

052042839

ABSTRACT:
A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.

REFERENCES:
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patent: 4735910 (1988-04-01), Mitsuya et al.
Hartmann, "Studies on the vapor growth of ZnS, ZnSe and ZnTe single crystals", Journal of crystal growth 42 (1977) 144-149.
Fujita et al., "Growth of cubic ZnS, ZnSe and ZnS.sub.x Se.sub.1-x single crystals by iodine transport," Journal of crystal growth 47 (1979) 326-334.
Palosz, "Growth of ZnS and Zn.sub.1-x Cd.sub.x S (x.ltoreq.0.07) Single crystals by iodine transport", Journal of crystal growth 60 (1982) 57-66.
John et al., "optically driven vapor transport of solids," IBM Tech. Disc. Bull. vol. 5, No. 5, Oct. 1962, 5-6.
Parker, "Single crystals and epitaxial films of ZnSe by chemical transport", J. Cryst. growth 9 (1971) 177-182.
Lendvay et al., "Hollow single crystal, of ZnS", J. Cryst. growth, 7 (1970) 61-64.

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