Semiconductor varistor embodying a lamellar structure

Details Semiconductor varistor embodying a lamellar structure Semiconductor varistor embodying a lamellar structure

Filed on

1976-04-19

Date issued

1977-06-28

Examiner

Wojciechowicz, Edward J.

Other Related Categories

357 60, 357 63, 357 88, 357 89, 357 90, H01L 2332, H01L 2904, H01L 29167

Type

Patent

Status

active

Patent number

040329658

Description

ABSTRACT:
A varistor has a lamellar structured body of semiconductor material. The lamellar structure is produced by migrating "wires" of a metal by a temperature gradient zone melting process through the solid material of the body to form a plurality of alternate regions of opposite type conductivity. A P-N junction is formed at the contiguous surfaces of the material of each pair of regions of opposite type conductivity. The material of the regions formed by the migrated wires is recrystallized semiconductor material of the body suitably doped with metal of the wire migrated therethrough to impart a predetermined type conductivity and a predetermined level of resistivity thereto.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3514715 (1970-05-01), Kosonocky

Affiliated with

Also associated with

Rating

Semiconductor varistor embodying a lamellar structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor varistor embodying a lamellar structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor varistor embodying a lamellar structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1525506