Stacked photovoltaic device with antireflection layer

Details Stacked photovoltaic device with antireflection layer Stacked photovoltaic device with antireflection layer

1989-10-31

1991-08-13

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

H01L 31075

Patent

active

050393545

ABSTRACT:
An improved stacked type photovoltaic device comprises a plurality of stacked photovoltaic elements wherein at least one element thereof comprises a semiconductor layer (a) having a refractive index na and a semiconductor layer (b) having a refractive index nb and a semiconductor layer (c) is inserted therebetween as an antireflection layer; wherein said semiconductor layer (c) has constitutent elements having a composition ratio different from the composition ratio of the constituent elements of both said semiconductor layer (a) and (b) and said semiconductor layer (c) has a refractive index nc=.sqroot.na.nb and a thickness d=.lambda./4.sqroot.na.nb, in which .lambda. represents a peak wavelength of the spectral sensitivity of an adjacent photovoltaic element positioned in the direction of light transmission.
The semiconductor layer (c) may also be constituted by a semiconductor film having an elemental composition comprising other elements in addition to the constituent elements of the semiconductor layer (b).

REFERENCES:
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patent: 4737653 (1988-04-01), Nakagawa et al.
patent: 4851302 (1989-07-01), Nakagawa et al.
patent: 4888062 (1989-12-01), Nakagawa et al.
J. C. C. Fan, SPIE, vol. 543 (1985), pp. 30-39.
M. E. Nell et al, Conference Record, 18th IEEE Photovoltaic Specialists Conf. (1985), pp. 116-121.

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