Silicon single crystal charge storage diode

Details Silicon single crystal charge storage diode Silicon single crystal charge storage diode

1976-06-01

1977-06-28

Edlow, Martin H.

357 63, 357 90, 350160LC, H01L 2714

Patent

active

040329542

ABSTRACT:
There is disclosed a silver doped silicon single crystal charge storage photodiode substrate suitable for use in an alternating current driven liquid crystal light valve. The gain capability of the charge storage photodiode makes it possible to construct a single crystal substrate ac light valve very similar in structure to that presently being used with a cadmium sulphide photodiode, but having improved operating characteristics and benefitting from a more fully developed manufacturing technology for silicon devices. One specific embodiment of such a single crystal substrate is a silicon substrate doped with a slow recombination center element such as silver.

REFERENCES:
patent: 3824002 (1974-07-01), Beard
patent: 3971931 (1976-07-01), Jehle
patent: 3975085 (1976-08-01), Yamada
patent: 3976361 (1976-08-01), Fraap

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