Light emitting semiconductor diode

Details Light emitting semiconductor diode Light emitting semiconductor diode

1976-07-30

1977-06-28

Edlow, Martin H.

357 17, 357 55, 357 16, H01L 3300, H01L 3319

Patent

active

040329453

ABSTRACT:
A light emitting semiconductor diode comprises a first semiconductor region having a first conductivity type and a narrow forbidden band gap, a second semiconductor region, disposed on the first semiconductor region, having the first conductivity type and a low impurity concentration, a third semiconductor region, disposed on the second semiconductor region, having a second conductivity type which is opposite to the first conductivity type, and an ohmic contact disposed on the surface of the first semiconductor region, which is opposite to the second semiconductor region. The surface has a plurality of holes extending from the outer surface through the first semiconductor region toward a p-n junction between the second and third semiconductor regions, which holes are filled with a highly reflective metal having a high thermal conductivity.

REFERENCES:
patent: 3303432 (1967-02-01), Garfinkel
patent: 3697336 (1972-10-01), Lamorte
patent: 3711789 (1973-01-01), Dierschke
patent: 3790868 (1974-02-01), Soshea
patent: 3974514 (1976-08-01), Kressel
patent: 3991339 (1976-11-01), Lockwood
Alferov, Soviet Physics, Semiconductors, vol. 3, No. 9, Mar. 1970.
Namizaki et al., Journ. of Appl. Physics, vol. 45, No. 6, June 1974.

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