Semiconductor laser

Details Semiconductor laser Semiconductor laser

1997-03-21

1999-01-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

058598650

ABSTRACT:
A semiconductor laser includes a substrate and an active layer. The substrate has a lattice constant which falls within the range between 0.565 nm and 0.56 nm. The active layer has a quantum well structure in which a GaInP alloy crystal with a lattice constant larger than the lattice constant of the substrate is formed as a well layer and an AlGaInP alloy crystal with a lattice constant smaller than the lattice constant of the substrate is formed as a barrier layer.

REFERENCES:
patent: 5745517 (1998-04-01), Bour et al.
patent: 5757835 (1998-05-01), Ono et al.
T. Tanaka et al., "Lasing Operation Up to 200 K in the Wavelength Range of 570-590 nm by GalnP/AlGalnP Double-Heterostructure Laser Diodes on GaAsP Substrates", Appl. Phys. Lett., vol. 66, No. 7, Feb. (1995), pp. 783-785.
H. Kressel et al., "Red-Emitting Ga(As,P)/(In,Ga)P Heterojunction Lasers", J. Appl. Phys., vol. 49, No. 6, Jun. (1978), pp. 3140-3149.

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