Samarium- and ytterbium-promoted oxidation of silicon and galliu

Fishing – trapping – and vermin destroying

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437237, 437239, 437244, 437245, 437983, 148DIG16, H01L 21302, H01L 21469, H01L 21461

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active

048065056

ABSTRACT:
A method is provided for the oxidation of a silicon or gallium arsenide surface by depositing thereon a samarium or ytterbium overlayer prior to exposure of the surface to an oxidizing atmosphere.

REFERENCES:
patent: 4526629 (1985-07-01), Latta
patent: 4684541 (1987-08-01), Franciosi
Chang, S., "Low-Electronegativity Overlayers and Enhanced Semiconductor Oxidation: Sm on Si(111) and GaAs(110) Surfaces", Phys. Rev. B (USA), vol. 35, No. 6, Feb. 15, 1987, pp. 3013-3016.
Soukiassian, P., "Electronic Properties of O.sub.2 on Cs or Na Overlayers Absorbed on Si(100)2.times.1 from Room Temperature to 650.degree. C.", Phys. Rev. B., vol. 35, No. 8, Mar. 15, 1987, pp. 4176-4179.
A. Franciosi et al., Solid State Commun., 47, 427 (1983).
A. Franciosi et al., Physical Review B, 29, 5611 (1984).
M. Grioni et al., Physical Review B, 32, 962 (Jul. 15, 1985).
F. U. Hillebrecht et al., Enhancement of Si Oxidation by Ce Overlayers, Brookhaven National Laboratory Internal Report (1986).
P. Soukiassian et al., J. Appl. Phys., 60, 4339 (1986).
F. U. Hillebrecht et al., Physical Review B, 34, 5377 (1986).

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