Method for impurity distribution simulation

Details Method for impurity distribution simulation Method for impurity distribution simulation

1996-07-26

1999-01-12

Teska, Kevin J.

Boots, shoes, and leggings

G06F 9455, G06F 1750

Patent

active

058597840

ABSTRACT:
A method for simulating an impurity distribution in a multilayer structure includes analytically simulating an impurity distribution for each layer to obtain a first impurity distribution profile for each layer by using impurity distribution moments defined for the material of each layer, analytically simulating a point defect distribution for a crystal layer to obtain a point defect distribution profile by using the first impurity distribution profile and point defect distribution moments defined for the material of crystal layer, simulating a thermal diffusion to obtain a final impurity distribution profile for each layer by using the first impurity distribution profile and point defect distribution profile. The point defect distribution moments are obtained previously for the material of the crystal layer by Monte Carlo method under typical conditions to obviate using the Monte Carlo method for each simulation under a specified condition.

REFERENCES:
patent: 4771012 (1988-09-01), Yabu et al.
patent: 5627772 (1997-05-01), Sonoda et al.
patent: 5635413 (1997-06-01), Mitsunaga et al.
H. Ryssel et al., "Models for Implantation into Multilayer Targets", Appl. Phys. A 41, 1986, pp. 201-207.
M.E. Law et al., "The Effect of Implantation Damage on Arsenic/Phosphorus Codiffusion", IEDM 88, 1988, pp. 640-643.
M. Hane et al., "Ion Implantation Model Considering Crystal Structure Effects", IEDM 88, 1988, pp. 648-651.
Analysis and Simulation of Semiconductor Devices, Chapter 3, Springer-Verlag Vien, New York, pp. 47-63.

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