Semiconductor lifetime measurement method

Details Semiconductor lifetime measurement method Semiconductor lifetime measurement method

1977-01-17

1981-06-16

Rosenberger, R. A.

Optics: measuring and testing

Range or remote distance finding

With photodetection

356433, G01N 2117

Patent

active

042734215

ABSTRACT:
A method for the measurement of minority carrier lifetime in semiconductor wafers, sheets and ribbons by purely optical means. The method does not require electrical or MOS contacts to the wafer, nor does it require any specific processing to facilitate measurement. The technique is non-destructive, and is applicable to any semiconductor wafer, with or without surface dielectric films (e.g., SiO.sub.2, Si.sub.3 N.sub.4, Ta.sub.2 O.sub.5) as long as it has no metal films. This technique is fast, accurate, and of reasonable high resolution, so that it may be applied to evaluate the effects of specific process steps (e.g., ribbon growth, diffusion, oxidation, ion implantation, delectric deposition, annealing) in real time and hence serve as a production control technique as well as a research tool. By utilizing reasonable equipment sophistication, this technique should enable the measurement of lifetime over a wide range of values, covering the scale from high-speed bipolar devices and integrated circuits (.about.10.sup.-9 s) to power transistors and solar cells (.about.10.sup.-3 s).

REFERENCES:
patent: 3555455 (1971-01-01), Paine
patent: 4003631 (1977-01-01), Biet et al.

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