Insulated gate field effect transistor having a deep channel por

Details Insulated gate field effect transistor having a deep channel por Insulated gate field effect transistor having a deep channel por

1977-08-29

1979-01-02

Clawson, Jr., Joseph E.

357 13, 357 52, 357 90, 357 91, H01L 2978

Patent

active

041329988

ABSTRACT:
The source and drain of an N-MOSFET can be brought closer together without substantially increasing capacitance and punch-through effects, by using a very high resistivity P-substrate, a moderately high resistivity P- type region in the channel zone and a thin but low resistivity surface-adjacent channel portion through which current flows. The P- type region and the surface-adjacent channel portion are ion-implantations. The P- type region extends deep enough into the substrate to shield the source from electrostatic coupling with the drain. Diffused, low reactance integrated circuit resistors can be made using the same principles.

REFERENCES:
patent: 3283221 (1966-11-01), Heiman
patent: 3600647 (1971-08-01), Gray
patent: 3631310 (1971-12-01), Das
patent: 3814992 (1974-06-01), Kump et al.
patent: 3891468 (1975-06-01), Ito et al.
patent: 4007478 (1977-02-01), Yagi
patent: 4021835 (1977-05-01), Etoh et al.
patent: 4047974 (1977-09-01), Harari
patent: 4074301 (1978-02-01), Paivinen et al.
J. Hanson et al., "An N--Channel MOSFET . . . Device Doping," I.E.D.M. Meeting Proc., 1974, pp. 373-385.
J. Verjans et al., "Electrical Char. . . . Logic Ckts.," I.E.D.M. Meeting Proc., 1974, pp. 386-389.
T. Masuhara et al., "Control and Design of MOSFET Low-Level Currents by Ion-Implantation," I.E.D.M. Meeting Proc., 1974, pp. 397-399.

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