MOS type field effect transistor

Details MOS type field effect transistor MOS type field effect transistor

1977-01-31

1979-01-02

Wojciechowicz, Edward J.

357 52, H01L 2978

Patent

active

041329970

ABSTRACT:
A MOS type field effect transistor has an electrode, which is in the neighborhood of, but not in contact with, the drain diffusion region and is electrically connected with the surface portion of the semiconductor substrate in which the MOS type field effect transistor is formed, and whose potential is held at the rear surface potential of the semiconductor substrate, i. e., the substrate bias potential.

REFERENCES:
patent: 4027321 (1977-05-01), Collins et al.

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