Semiconductor device with perovskite capacitor and its manufactu

Details Semiconductor device with perovskite capacitor and its manufactu Semiconductor device with perovskite capacitor and its manufactu

1998-03-18

1999-09-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

H01L 2120

Patent

active

059536195

ABSTRACT:
A method of manufacturing a semiconductor device which has the steps of: forming an insulated gate field effect transistor of a first conductivity type on a semiconductor substrate,; forming a first insulating film over the semiconductor substrate, the first insulating film covering the insulated gate electrode; forming a contact window through the first insulating film to at least one of the source/drain regions; embedding a metal plug in the contact window; forming a second insulating film having an oxygen blocking function on the first insulating film, the second insulating film covering the metal plug; forming a capacitor lower electrode on the second insulating film; forming a dielectric oxide film having a perovskite crystal structure on the lower electrode; annealing the semiconductor substrate in an oxygen-containing atmosphere; and forming a capacitor upper electrode on the dielectric oxide film. A semiconductor device can be realized which has capacitors with dielectric oxide films of a perovskite crystal structure having a high dielectric constant.

REFERENCES:
patent: 5442585 (1995-08-01), Eguchie et al.
patent: 5739563 (1998-04-01), Kawakubo et al.

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