Single longitudinal mode GaAs/GaAlAs double heterostructure lase

Details Single longitudinal mode GaAs/GaAlAs double heterostructure lase Single longitudinal mode GaAs/GaAlAs double heterostructure lase

1977-03-28

1979-01-02

Anagnos, Larry N.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

041329600

ABSTRACT:
A heterojunction laser in which single longitudinal mode operation is achieved by heavily doping the active region of the laser. The dopent density should be approximately 10.sup.19 /cm.sup.3 when the dopent is zinc. A doping density as heavy as possible should be used when the dopent is germanium or any other acceptor impurity. The heavy doping density of the active region excludes the injection of holes into the active region and that exclusion results in single longitudinal mode operation.

REFERENCES:
patent: 3916339 (1975-10-01), Landany et al.
patent: 3984262 (1976-10-01), Burnham et al.
patent: 4011113 (1977-03-01), Thompson et al.
M. Ettenberg et al., "Heterojunction Diodes of (AlGa)As-GaAs with Improved Degradation Resistance", Applied Physics Letters, vol. 26, No. 8, 15 Apr. 1975, p. 478.

Affiliated with

Also associated with

Rating

Single longitudinal mode GaAs/GaAlAs double heterostructure lase does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single longitudinal mode GaAs/GaAlAs double heterostructure lase, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single longitudinal mode GaAs/GaAlAs double heterostructure lase will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1519720