Semiconductor device with contact structure and method of manufa

Details Semiconductor device with contact structure and method of manufa Semiconductor device with contact structure and method of manufa

1995-08-23

1998-11-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257757, 257763, 257768, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

058348468

ABSTRACT:
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al--CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

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