Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1996-12-23
1999-01-12
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257291, 257292, 257293, 257234, 257444, 257 59, 257673, 257779, H01J 4014
Patent
active
058594639
ABSTRACT:
A method of forming a contact for a photosensitive element of a photosensitive imager including a common electrode separated from a bottom contact by intervening layers of an SiOx transistor passivation layer over the bottom contact and an SiNx diode passivation layer over the transistor passivation layer. Controlled etching through the passivation layers exposes but does not damage the thin film transistor passivation layer extending in regions beyond the common electrode, and also improves adherence of a protective gasket in such regions. The contact pad formed in this process has a layer of diode passivation material and a layer of transistor passivation material disposed between the upper common electrode material layer and the underlying source and drain electrode material layer, with a via provided having smooth and sloped sidewalls over which the common electrode material extends to provide electrical contact between the common electrode material layer and the source and drain electrode material layer.
REFERENCES:
patent: 5233181 (1993-08-01), Kwasnick et al.
patent: 5463242 (1995-10-01), Castleberry
patent: 5648654 (1997-07-01), Possin
Kwasnick Robert Forrest
Liu Jianqiang
Possin George Edward
Abraham Fetsum
General Electric Company
Ingraham Donald S.
Stoner Douglas E.
Thomas Tom
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