Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1997-05-08
1998-11-10
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257500, 257355, H01L 2900, H01L 2362
Patent
active
058348263
ABSTRACT:
A circuit, and method of operation, allows initial operation of a parasitic transistor in a junction isolated integrated circuit. The initial operation activates elements that produce a turn-on drive signal to a power transistor that has a part in the parasitic transistor, resulting in ending the operation of the parasitic transistor. A low side driver, such as an N channel DMOS, in a bridge circuit for an inductive load is arranged with a sinker region close by so that the sinker region acts as a preferred collector of a parasitic transistor that also includes a region of the low side driver as an emitter. The circuit includes logic that processes signals developed by initial operation of the parasitic transistor to develop the turn-on drive signal to the particular low side driver without affecting other low side drivers in the integrated circuit and before any other devices in the integrated circuit are caused to sink any appreciable current in parasitic transistor operation. When implemented in integrated circuits with a barrier region around the low side driver, the sinker region acting as a preferred collector of the parasitic transistor is in addition to the barrier region and is located within the barrier region more proximate the low side driver.
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Galanthay Theodore E.
Jorgenson Lisa K.
Meier Stephen
STMicroelectronics Inc.
Telfer Gordon H.
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