Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-02-14
1999-01-12
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257 58, 257 59, 257 61, 257 72, H01L 2904, H01L 2976, H01L 31036
Patent
active
058594450
ABSTRACT:
An electro-optical device having a plurality of pixel electrodes, each with at least one thin film transistor. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, or nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor includes immunity to illumination incident thereupon, which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors that are located such that they do not receive light rays.
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Clark Jhihan B.
Ferguson Jr. Gerald J.
Robinson Eric J.
Saadat Mahshid
Semiconductor Energy Laboratory Co,. Ltd.
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