Solid state image sensor having a wide light reception area

Details Solid state image sensor having a wide light reception area Solid state image sensor having a wide light reception area

1997-06-12

1998-11-10

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257249, 257250, H01L 27148, H01L 29768

Patent

active

058348018

ABSTRACT:
A solid state image sensor includes a semiconductor substrate and a plurality of transfer lines over the substrate and receiving clock signals, at least one of the plurality of transfer lines having a transparent conductive material. A plurality of transfer electrodes are connected to the transfer lines and a plurality of photoelectric conversion regions under a surface of the substrate generate image signals. A plurality of charge transfer regions under the surface of the substrate transfer the image signals from the photoelectric conversion regions in response to the clock signals from the transfer lines.

REFERENCES:
patent: 5040038 (1991-08-01), Yutani et al.
patent: 5399888 (1995-03-01), Nakashiba
patent: 5661317 (1997-08-01), Jeong
patent: 5723884 (1998-03-01), Kim
patent: 5731601 (1998-03-01), Shioyama et al.
Machio Yamagishi et al., "A 2 Million Pixel FIT-CCD Image Sensor for HDTV Camera Systems", IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 976-980.

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