Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1996-03-18
1998-11-10
Niebling, John
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438613, H01L 2144, H01L 2100
Patent
active
058343270
ABSTRACT:
In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. the semiconductor integrated circuit has substantially the same length as one side of a display screen (i.e., a matrix circuit) of the display device and is obtained by peeling it from another substrate and then forming it on the first substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate, includes a matrix circuit and a peripheral driver circuit and has at least a size corresponding to the matrix circuit and the peripheral driver circuit. Spacers is provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A liquid crystal material is filled inside a region enclosed by the seal material. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.
REFERENCES:
patent: 5339180 (1994-08-01), Katoh
patent: 5376561 (1994-12-01), Vu
patent: 5436744 (1995-07-01), Arledge
patent: 5596023 (1997-01-01), Tsubota
Arai Yasuyuki
Nakajima Setsuo
Yamazaki Shunpei
Lebentritt Michael S.
Niebling John
Semiconductor Energy Laboratory Co,. Ltd.
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