Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1997-09-18
1998-11-10
Tsai, Jey
Semiconductor device manufacturing: process
Electron emitter manufacture
257 10, 445 50, H01L 2100
Patent
active
058343245
ABSTRACT:
A field emission cold-cathode device has a supporting substrate, and an emitter for emitting electrons disposed on the supporting substrate. The supporting substrate is essentially formed of a transparent synthetic resin. The emitter is formed by molding a portion of a conductive material layer such as Au which has been disposed on the supporting substrate into a conical shape. The conductive material layer functions also as a cathode wiring. An engaging concave portion is formed on a surface of the emitter to be bonded with the supporting substrate. In conformity with this engaging concave portion, a convex portion is integrally formed on the supporting substrate so as to be hermetically fitted in the engaging concave portion.
REFERENCES:
patent: 4307507 (1981-12-01), Gray et al.
patent: 5580827 (1996-12-01), Akamine
C.A. Spindt, et al., "Physical Properties of Thin-film Field Emission Cathodes with Molybdenumn Cones", Journal of Applied Physics, vol. 47, No. 12, Dec. 1976, pp. 5248-5263.
H.F. Gray, et al., "A vacuum Field Effect Transistor Using Silicon Field Emitter Arrays", IEDM Tech, Dig. 1986, pp. 776-779.
Kabushiki Kaisha Toshiba
Tsai Jey
Zarneke David A.
LandOfFree
Field emission cold-cathode device and method of manufacturing t does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field emission cold-cathode device and method of manufacturing t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field emission cold-cathode device and method of manufacturing t will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1515994