Deep channel MOS transistor

Details Deep channel MOS transistor Deep channel MOS transistor

1975-05-12

1976-12-28

Lynch, Michael J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 91, 307238, 307304, H01L 2978

Patent

active

040005046

ABSTRACT:
A semiconductor charge storage and detection device is provided in which an ion implanted conductive channel is buried between source and drain regions in the bulk of a semiconductor substrate. A charge storage region extends between the channel and the surface of the semiconductor device. The charge storage region is isolated from the semiconductor substrate and may be depleted of charge or enabled to store charge depending upon the electrical potential applied to a gate electrode at the surface of the device. The amount of charge stored may be detected by sensing the conductance of the buried channel. The device may be variously configured, e.g. as a non-destructive readable photosensor or as a memory cell.

REFERENCES:
patent: 3283221 (1966-11-01), Heiman
patent: 3631308 (1971-12-01), Krolikowski
patent: 3676715 (1972-07-01), Brojdo
patent: 3814992 (1974-06-01), Kump et al.
patent: 3906296 (1975-09-01), Maserjian et al.
patent: 3916268 (1975-10-01), Engeler et al.
D. Kahng et al., "A Fl. Gate and its Appl. to Mem. DeV.sub.2," Bell. Tel. Tech. J., vol. 46, Aug. 1967, pp. 1288-1295.
M. Lenzlinger et al., "Fowler-Nordheim Tunneling into Thermally Grown SiO.sub.2," J. Appl. Phys., vol. 40, No. 1, Jan. 1969, pp. 278-283.
R. Oakley, "MNOS: A New Non-Volatile Store," Compon. Technol. (G.B.), vol. 4, No. 5, Oct. 1970, pp. 17-21.
B. Agusta et al., "Nonvolatile Imaging Devices," IBM Tech. Discl. Bull., vol. 15, No. 9, Feb. 1973, p. 2821.
C. Bosselaar, "Charge Injection into SiO.sub.2 from Rev. Biased Jens.," S.S. Electronics, vol. 16, May 1973, pp. 648-651.
J. Verwey et al., "ATMOS-An Elect. Reprog. Read-Only Mem. Device," IEEE Trans. on Elec. Dev., vol. ED-21, No. 10, Oct. 1974, pp. 631-636.

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