Microelectronic electron emitter

Details Microelectronic electron emitter Microelectronic electron emitter

1990-08-17

1991-12-31

James, Andrew J.

357 16, H01L 2912

Patent

active

050775979

ABSTRACT:
A planar doped barrier region of semiconductor material is coupled to a vacuum or gaseous region to provide electron emission from the planar doped barrier region into the vacuum or gaseous region. When a voltage is applied across the planar doped barrier region electrons flow from one end of the region to another. This flow results in the emission of electrons if the work function of the emission surface is less than the bandgap of the semiconductor material. The device of the present invention can be used as a vacuum microelectronic emitter, a vacuum microelectronic transistor, light source, klystron, or travelling wave tube.

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Pederson, D. et al., Introduction to Electronic Systems, Circuits, and Devices, McGraw-Hill, 1966, pp. 377-378.
Nelson, Richard B., Klystrons, pp. 9-29.

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