High voltage semiconductor device

Details High voltage semiconductor device High voltage semiconductor device

1990-07-12

1991-12-31

Hille, Rolf

357 13, 357238, 357 20, 357 42, H01L 2906, H01L 2990, H01L 2968, H01L

Patent

active

050775901

ABSTRACT:
The present invention relates to high voltage semiconductor devices with an integrated Zener diode used as a protective element against overvoltage. The Zener breakdown voltage can be increased while providing high operating voltage to the whole semiconductor device, by forming a region of lower impurity concentration around the cathode of the Zener diode. This lowers the current amplification factor of a parasitic transistor, enabling an increase in the Zener breakdown voltage without decreasing the withstand voltage of the whole semiconductor device.

REFERENCES:
patent: 4920445 (1990-04-01), Jun

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