Diamond electron emitter

Details Diamond electron emitter Diamond electron emitter

1998-01-21

1999-09-14

Day, Michael

Electric lamp and discharge devices

Discharge devices having a thermionic or emissive cathode

313306, 313631, 313491, 257 77, H01J 2946

Patent

active

059527722

ABSTRACT:
An electron emitter (2) has a semiconductor substrate (20) doped with an n-type region (21). A diamond layer (24) is doped by ion implantation with a p-type dopant to form a graded dopant profile region (27) that increases away from the upper surface of the diamond layer (24) and a thin insulating region (28) separating the p-type region (27) from the n-type region (21). The emitter (2) has a first electrical contact (23) on a lower surface of the substrate (20) and a second electrical contact (25) on the upper surface of the diamond layer (24) such that a voltage can be applied across the emitter (2) to cause tunneling of electrons from the n-type region (21) through the insulating region (28) into the p-type region (27), causing emission of electrons from an exposed surface (29). A lamp or display (1) includes several such electron emitters (2) and contains gas at reduced pressure, which is ionized by the emitted electrons, thereby generating UV radiation, which causes a fluorescent layer (5) on a transparent window (3) to produce visible light.

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Brandes, G.R., et al., "Diamond Junction Cold Cathode," Diamond and Related Materials, vol. 4, 1995, pp. 586-590 (no month).
Phetchakul, T., et al., "`Backward Diode` Characteristics of p-Type Diamond
-Type Silicon Heterojunction Diodes,", Japanese Journal of Applied Physics, vol. 35, Part 1, No. 8, Aug. 1996, pp. 4247-4252.

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