High-frequency semiconductor device and mounted structure thereo

Details High-frequency semiconductor device and mounted structure thereo High-frequency semiconductor device and mounted structure thereo

1997-06-27

1999-09-14

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Transmission line lead

257275, 257758, H01L 23528

Patent

active

059527099

ABSTRACT:
A high-frequency semiconductor device contains a semiconductor element in a cavity formed by a dielectric board and a cap. A first high-frequency transmission line connected to the semiconductor element is formed on the surface of said dielectric board in said cavity and a second high-frequency transmission line is formed on the bottom surface of said dielectric board, so that said first high-frequency transmission line and said second high-frequency transmission line are electromagnetically coupled together. In this semiconductor devise in which the first transmission line and the second transmission line are electromagnetically coupled together, the transmission lines need not be passed over the side wall of the cap, and neigther reflection loss or radiation loss takes place on the side wall. Besides, transmission loss of high-frequency signals is caused by neigther through-holes or via-holes, and is effectively suppressed.

REFERENCES:
patent: 4259684 (1981-03-01), Dean et al.
patent: 4875087 (1989-10-01), Miyauchi et al.
patent: 5387888 (1995-02-01), Eda et al.
patent: 5426319 (1995-06-01), Notani
patent: 5596171 (1997-01-01), Harris et al.

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