Method for improving erase characteristics of buried bit line fl

Details Method for improving erase characteristics of buried bit line fl Method for improving erase characteristics of buried bit line fl

1990-08-03

1991-12-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 69, 437241, 437941, 148DIG114, H01L 21265, H01L 2176

Patent

active

050772309

ABSTRACT:
A process for fabricating contactless electrically programmable and electrically erasable memory cells of the flash EPROM type. The cells use elongated source and drain regions disposed beneath field oxide regions. Ammonia formed during the field oxidation process reacts with the silicon substrate to form a thin silicon nitride layer in the beak region. A thin tunnel oxide is then grown. During tunnel oxide formation lateral growth of the field oxide is inhibited by the thin nitride layer previously formed. However, the tunnel oxide thinning (due to the existence of the thin nitride layer) induced low breakdown voltage is overcome by the enhanced oxide growth in the beak due to the buried source/drain dopants. The tunnel oxide in the erase region is therefore uniform and thin. The thin, uniform oxide in the tunnel region leads to improved erase characteristics.

REFERENCES:
patent: 4113515 (1978-09-01), Kooi et al.
patent: 4401691 (1983-08-01), Young
patent: 4780424 (1988-10-01), Holler et al.
Kooi et al., "Formation of . . . in NH.sub.3 Gas", Journal of Electrochemical Society, vol. 123, No. 7, pp. 1117-1120, 1976.
"Identification and Elimination of Gate Oxide Defect Origin Produced During Selective Field Oxidation"; Itsumi, et al.; J. Electrochem. Soc.; vol. 129, No. 4: 4/82; pp. 800-806.
"Bird's Beak Configuration and Elimination of Gate Oxide Thinning Produced During Selective Oxidation"; Shankoff et al.; J. Electrochem. Soc.; vol. 127; No. 1; 1/80; pp. 216-222.

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