Method of accessing the circuitry on a semiconductor substrate f

Details Method of accessing the circuitry on a semiconductor substrate f Method of accessing the circuitry on a semiconductor substrate f

1996-10-02

1999-09-14

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438 8, 438 14, 438735, 438737, 216 65, H01L 2100

Patent

active

059522470

ABSTRACT:
A method for accessing a portion of an integrated circuit formed on top of a semiconductor substrate from the bottom of the semiconductor substrate. First, alignment marks are located which are approximately aligned to the integrated circuit. These alignment marks are then used in conjunction with a circuit diagram of the integrated circuit to determine the point on the bottom of the semiconductor substrate residing beneath the portion of the integrated circuit which the practitioner desires to access. Finally, an opening is etched into the bottom of the semiconductor substrate at this point.

REFERENCES:
patent: 4632724 (1986-12-01), Chesebro et al.
patent: 4650744 (1987-03-01), Amano
patent: 4732646 (1988-03-01), Elsner et al.
patent: 5064498 (1991-11-01), Miller
patent: 5268065 (1993-12-01), Grupen-Shemansky
patent: 5805421 (1998-09-01), Livengood et al.

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