Semiconductor connecting device

Details Semiconductor connecting device Semiconductor connecting device

1995-11-01

1996-07-02

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, H01L 2348, H01L 2352, H01L 2940, H01L 2328

Patent

active

055325157

ABSTRACT:
The semiconductor connecting device comprises a first conductive layer to be connected electrically; an insulating film covering the first conductive layer in such a way as to expose a predetermined portion of the first conductive layer, resulting in forming a contact hole; a conductive material pad formed in the contact hole so as to be connected with the first conductive layer, in a limited way over the upper surface of the insulating film; a second conductive layer formed on the extended conductive material pad, being connected with the first conductive layer; an etching barrier material formed on said conductive material pad of said contact hole and a part of the extending region, said second conductive layer being formed on the region both of said conductive material pad which is not covered with said etching barrier material and which is covered by said etching barrier material.

REFERENCES:
Sze et al, Semiconductor Devices . . . , pp. 461-465, 1985.

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