Semiconductor laser

Details Semiconductor laser Semiconductor laser

1995-03-17

1996-10-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

055616810

ABSTRACT:
A semiconductor laser includes a first conductivity type lower cladding layer on a first conductivity type semiconductor substrate; an active layer for laser oscillation on the lower cladding layer; a second conductivity type first upper cladding layer on the active layer, the second conductivity type being opposite the first conductivity type; current blocking layers at both sides of the active layer to confine current flow to the active layer; a second conductivity type second upper cladding layer disposed on the first upper cladding layer and the current blocking layers, interfaces between the current blocking layers and (i) the lower cladding layer, (ii) the first upper cladding layer, and (iii) the second upper cladding layer being crystalline regrowth interfaces; and doped layers including at least one of Fe, Cr, and Co atoms as a dopant disposed at the crystalline regrowth interfaces. At least one of Fe, Cr, and Co enters into the crystal lattices and changes of the crystal lattices. Movements of impurities are suppressed at the crystalline regrowth interfaces, thereby suppressing laser deterioration.

REFERENCES:
patent: 4660208 (1987-04-01), Johnston, Jr. et al.
patent: 5045496 (1991-09-01), Hess et al.
patent: 5170404 (1992-12-01), Ohtoshi et al.
patent: 5452315 (1995-09-01), Kimura et al.
Ohkura et al, "Low Threshold FS-BH Laser on p-InP Substrate Grown By All-MOCVD", Electronics Letters, vol. 28, No. 19, Sep. 1992, pp. 1844-1845.
Sakakibara et al, "High-Power 1.3-.mu.m InGaAsP P-Substrate Buried Crescent Lasers", Journal of Lightwave Technology, vol. LT-3, No. 5, Oct. 1985, pp. 978-984.
Kazmierski et al, "Universal Iron Behaviour In Zn-, Cd- and Be- Doped P-Type InP", Journal of Crystal Growth, vol. 116, 1992, pp. 75-80 (No month).

Affiliated with

Also associated with

Rating

Semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1507917