Semiconductor device to prevent out-diffusion of impurities from

Details Semiconductor device to prevent out-diffusion of impurities from Semiconductor device to prevent out-diffusion of impurities from

1989-02-07

1991-02-05

Mintel, William

357 45, 357 59, 357 23500, 357 41, H01L 2348

Patent

active

049909983

ABSTRACT:
A semiconductor device includes a first conductor layer into which is diffused an impurity for lowering the resistance, and a second conductor layer provided on the upper side of the first conductor layer through a stopper layer which suppresses the out-diffusion of the impurity. By virtue of the existence of the stopper layer, it is possible to inhibit the above-described impurity from being diffused into the second conductor layer. In SRAM, resistance variations between high-resistance elements which correspond to the second conductor layer can be suppressed, so that it is possible to prevent the lowering of the yield with respect to the electrical reliability. In SRAM, further, the resistance of the high-resistance elements is not lowered; therefore, it is possible to reduce the power consumption.

REFERENCES:
patent: 4376983 (1983-03-01), Tsaur et al.
patent: 4392150 (1983-07-01), Courreges
patent: 4488166 (1984-12-01), Lehrer
patent: 4524377 (1985-06-01), Eguchi
patent: 4536941 (1985-08-01), Kuo et al.
patent: 4673969 (1987-06-01), Ariizumi et al.
patent: 4803534 (1989-02-01), Koike et al.

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