AlGaN compound semiconductor material

Details AlGaN compound semiconductor material AlGaN compound semiconductor material

1989-09-29

1991-12-31

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With contiguous layer doped to degeneracy

148DIG65, 148DIG113, 148 334, 148 335, 437110, 437129, H01L 21205, C01B 2106

Patent

active

050768603

ABSTRACT:
A compound semiconductor material includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga.sub.x Al.sub.1-x N (wherein 0.ltoreq.x.ltoreq.1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.

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W. Seifert and A. Tempel, "Cubic Phase Gallium Nitride by Chemical Vapour Deposition", Phys. Stat. Sol. (a) 23 (1974)--K39-K40.
"Epitaxial Growth of Undoped and Mg-Doped GaN", vol. 15, No. 10, Japanese Journal of Applied Physics, Oct. 1976, pp. 1943-1950, Masatoshi Sano et al.

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