Non-volatile programmable bistable multivibrator with reduced pa

Static information storage and retrieval – Associative memories – Ferroelectric cell

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365154, 36518509, 365200, G11C 1140

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active

055616216

ABSTRACT:
The disclosure relates to integrated circuits and, notably, to memories. A description is given of a bistable type of programmable, non-volatile memory, namely a memory that can take one state or another by the programming of one of two floating-gate transistors of the cell. To program a cell such as this, there are two transistors for the application of a programming voltage (VPRG). In order that the signals going through the programming paths (in particular the address signals) may not disturb the state of the cell in reading mode, provision is made for two isolation transistors interposed between the transistors for the application of the programming voltage and the drains of the floating-gate transistors. These isolation transistors are made conductive by a signal CAMSEL solely for a programming operation and solely for only one group of cells to be programmed. These cells can be applied notably to the storage of defective address elements in the redundancy circuits of large-capacity memories.

REFERENCES:
patent: 4460978 (1984-07-01), Jiang et al.
patent: 5068825 (1991-11-01), Mahant-Shetti et al.
patent: 5347484 (1994-09-01), Kwong et al.
IEEE Journal of Solid-State Circuits., vol. 17, No. 5, Oct. 1982, pp. 847-851 Donaldson et al. "SNOS 1Kx8 static nonvolatile RAM".
IEEE Journal of Solid-State Circuits., vol. 22, No. 5, Oct. 1987, pp. 64-692 Ciaoca et al. "A million-cycle CMOS 256K EEPROM".

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