Control and 3-dimensional simulation model of temperature variat

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374121, H05B 650

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active

055616127

ABSTRACT:
Temperature nonuniformity across a semiconductor wafer during both the transient and steady state of a typical rapid thermal processing (RTP) cycle has been a deterrent in using RTP in many VLSI unit processes. The present invention consists of a three-dimensional mathematical model to study the temperature variation across a wafer in an RTP oven for given lamp power settings, during both the transient and steady state of a typical thermal cycle and control a heating lamp back by a computer program. The simulation package has been written in FORTRAN, and the validity of various models have been checked by performing a series of oxidation experiments.

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