Semiconductor device containing conductor plug that can reduce c

Details Semiconductor device containing conductor plug that can reduce c Semiconductor device containing conductor plug that can reduce c

1995-08-31

1997-06-24

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257754, 257756, 257382, 257384, 257385, H01L 2348

Patent

active

056419910

ABSTRACT:
A lower-level conductor layer is formed in a surface of, on or over a semiconductor substrate. An interlayer insulator film is formed on the lower-level conductor layer. An upper-level conductor layer such as an interconnection layer of the semiconductor device is formed on the interlayer insulator film. A conductor plug is formed in a contact hole of the interlayer insulator film. The lower-level conductor layer and the upper-level conductor layer are electrically connected with each other through the conductor plug. A top part of the conductor plug protrudes from the interlayer insulator film. The upper-level conductor layer is contacted with a top face and a side face of the top part of the conductor plug. Both the contact resistance between the conductor contact and the upper-level conductor layer and the resistance of the upper-level conductor layer itself can be reduced without using a special equipment and a special process.

REFERENCES:
patent: 4795722 (1989-01-01), Welch et al.
patent: 5057902 (1991-10-01), Haskell

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