Method of chemical mechanical polishing planarization of an insu

Details Method of chemical mechanical polishing planarization of an insu Method of chemical mechanical polishing planarization of an insu

1994-03-23

1996-07-02

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437231, 437238, 1566361, H01L 213105

Patent

active

055321917

ABSTRACT:
A method of planarizing an insuating film includes the steps of preparing a semiconductor substrate; treating an uneven surface of the substrate with an organic solvent; forming an insulating film on the thus-treated surface of the substrate by a chemical vapor deposition using an organic silicon compound as a raw material or depositing SOG, forming an etching stop film having a chemical mechanical polishing etching speed slower than that of the insulating film by depositing silicon oxide or silicon oxynitride by performing a chemical vapor deposition using an inorganic silicon compound as a raw material; and etching back at least a part of the insulating film formed on the uneven surface of the substrate by a chemical mechanical polishing process using the etching stop film.

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