Semiconductor device having heavily doped silicon film

Details Semiconductor device having heavily doped silicon film Semiconductor device having heavily doped silicon film

1994-12-12

1996-07-02

Kunemund, Robert

Fishing, trapping, and vermin destroying

437173, 437174, 437233, H01L 2120

Patent

active

055321836

ABSTRACT:
A method of manufacturing a semiconductor device including the steps of depositing a silicon film on an underlying layer while doping phosphorus to a concentration of 7.times.10.sup.20 to 2.times.10.sup.21 atoms/cm.sup.3, and thereafter heating the silicon film. A semiconductor device having a silicon film with a sufficiently low resistivity is provided.

REFERENCES:
patent: 4551906 (1985-11-01), Ogura et al.
patent: 5372962 (1994-12-01), Hirota et al.
patent: 5389570 (1995-02-01), Shiozawa
patent: 5429979 (1995-07-01), Lee et al.
"Defect evaluation of heavily P-doped Si epitaxial films grown at low temperatures" Jia. et al., in Jap. Jr. Appl. Phys. vol. 32 (5A), 1993, pp. 1884-1888.
"Heavily doped (10 cm) Silicon films grown by PhotoCVD at very low temperatures of 250 C.," by Yamada et al. in Jap. Jr. Appl. Phys. pp. L2284-L2287, vol. 28(12), 1989.
"Effects of substrate crystallinity and dopant on the growth kinetics of platinum silicides" by Takai et al. in Jr. Appl. Phys. vol. 58(11), Dec. 1985, p. 4165.

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