Process for the production of a semiconductor laser with tape ge

Details Process for the production of a semiconductor laser with tape ge Process for the production of a semiconductor laser with tape ge

1986-05-14

1988-05-03

Roy, Upendra

Fishing, trapping, and vermin destroying

372 45, 372 46, 437 22, 437129, 148DIG94, H01L 21265, H01L 21208

Patent

active

047420138

ABSTRACT:
Process is disclosed for the production of a semiconductor laser with tape geometry and laser obtained by this process.
After producing a double heterostructure on a substrate, a p-dopant is implanted in these layers, so that the two layers are made insulating. This is followed by local annealing by focussing an appropriate energy source. The electrical conduction properties of the annealed part are restored and it is doped. Thus, a p-doped conductive tape is produced between two electrically insulating parts above the active zone of the laser, which increases the current confinement in said zone.
The disclosed invention is used in optical telecommunications.

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Nuclear Instruments & Methods, vol. 182/183, Apr.-May 1981, pp. 699-703, North-Holland Publishing Company, Amsterdam; Y. Yuba et al.: "Deep levels in implanted, pulse-laser-annealed GaAs".
IEEE Journal of Quantum Electronics, vol. QE-16, No. 8, Aug. 1980, pp. 898-901, IEEE, New York, U.S.; A. J. Schorr et al.; "Development of self-pulsations due to self-annealing of proton bombarded regions during aging in proton bombarded stripe".
IEEE Jornal of Quantum Electronics, vol. QE-11, No. 7, Jul. 1975; pp. 413-418, New York, U.S.; J. M. Blum et al.; "Oxygen-implanted double-heterojunction GaAs/GaAlas injection lasers".

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