Method of making semiconductor laser

Details Method of making semiconductor laser Method of making semiconductor laser

1994-09-02

1996-01-23

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 90, H01L 2120

Patent

active

054864909

ABSTRACT:
A method of making a semiconductor laser includes forming spaced apart insulating films on a semiconductor substrate of a first conductivity type defining a central groove and two regions transverse to, contiguous to, and continuous with the central groove, the semiconductor substrate being exposed in the groove and the two regions; successively, epitaxially growing a first cladding layer of a first conductivity type, an active layer including a multiple quantum well structure having alternating well and barrier layers, a second cladding layer of a second conductivity type, opposite the first conductivity type, and a contact layer of the second conductivity type on the semiconductor substrate using a process producing thicker well layers in the groove than in the two regions; and forming first and second electrodes on the substrate and the contact layer, respectively.

REFERENCES:
Aoki et al, "Novel Structure MOW Electroabsorption Modulator/DFB-Laser Integrated Device Fabricated By Selective Area MOCVD Growth", Electronics Letters, vol. 27, No. 23, Nov. 1991, pp. 2137-2140.
Shima et al, "High-Power Long-Cavity T.sup.3 Laser with a Very Narrow Beam", Japanese Journal of Applied Physics, vol. 28, No. 1, Jan. 1989, pp. 105-107.
Burnham et al, "Semiconductor Injection Lasers with Quantum Size Effect Transparent Waveguiding", Xerox Disclosure Journal, vol. 11, No. 2, Mar./Apr. 1986, pp. 97-100.

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