Method for forming a lateral bipolar transistor

Details Method for forming a lateral bipolar transistor Method for forming a lateral bipolar transistor

1994-11-21

1996-01-23

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 32, 437917, 148DIG96, H01L 218222

Patent

active

054864810

ABSTRACT:
A lateral bipolar transistor structure (10) formed in a laterally isolated semiconductor device tub (22) of a first conductivity type is provided. First and second trenches are etched in the device tub and filled with doped polysilicon of a second conductivity type to form an emitter (30) and a collector (32). The portion of the tub (22) between the emitter (30) and collector (32) regions forms a base region. This configuration provides high emitter area and minimal device surface area, as well as emitter (30) and collector (32) regions which are interchangeable, greatly easing layout of integrated circuits using the transistor structure (10).

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