SiO.sub.2 electrets and process of making it

Details SiO.sub.2 electrets and process of making it SiO.sub.2 electrets and process of making it

1994-01-13

1996-01-23

King, Roy V.

Stock material or miscellaneous articles

Composite

Of silicon containing

427579, 427578, 4273977, 427573, 427574, B32B 1504, H05H 124

Patent

active

054864232

ABSTRACT:
For making an SiO.sub.2 electret, a layer of SiO.sub.2 is formed on a solid substrate (5) by chemical vapor deposition in a vapor phase starting from a plasma containing silicon and oxygen and the layer so formed (10) is subjected to a thermal treatment by raising its temperature to above 100.degree. C. during a time period longer than 1 hour, before being electrically charged.

REFERENCES:
Gunther et al, "Annealing Effects in TSD-spectra of SiO2 Electrets", 7th International Symposium on Electrets, 25 Sep. 1991, pp. 663-668.

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