Opto-semiconductor device with piezoelectric

Details Opto-semiconductor device with piezoelectric Opto-semiconductor device with piezoelectric

Filed on

1995-01-25

Date issued

1996-10-01

Examiner

Mintel, William

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Thin active physical layer which is

SubSubClass

Heterojunction

Other Related Categories

257 17, 257 18, 257 22, 257 21, 372 45, 372 46, 359248, H01L 2906, H01L 310328, H01L 310336

Type

Patent

Status

active

Patent number

055613012

Description

ABSTRACT:
An opto-semiconductor device is disclosed which is provided with a quantum well structure comprising a first and a second barrier layer and a well layer sandwiched by the barrier layers. The barrier layers are provided in at least part thereof with a strain layer enabled to generate an internal electric field by a piezoelectric effect. The barrier layers are adapted to sandwich the well layers.

REFERENCES:
patent: 4106028 (1978-08-01), Jeffers et al.
patent: 4952792 (1990-08-01), Caridi
patent: 5012304 (1991-04-01), Kash
patent: 5296721 (1994-03-01), Schulman et al.
patent: 5313073 (1994-05-01), Kuroda et al.
Gershoni et al, "Strained-Layer Ga.sub.1-y In.sub.x As/InP Avalanche Photodetectors," Appl Phys. Lett. 53 (14), 3 Oct. 1988, pp. 1294-1296.
Osbourn et al, "A GaAs.sub.x P.sub.1-x /GaP Strained-Layer Superlattice," Appl. Phys. Lett. 41(2), 15 Jul. 1982, pp. 172-174.

Affiliated with

Also associated with

Rating

Opto-semiconductor device with piezoelectric does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Opto-semiconductor device with piezoelectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Opto-semiconductor device with piezoelectric will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1503505