Method of forming a uniform thin film by cooling wafers during C

Fishing – trapping – and vermin destroying

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437233, 437235, 437238, 437240, H01L 21205, H01L 2131, H01L 213205

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055610870

ABSTRACT:
A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

REFERENCES:
patent: 4113547 (1978-09-01), Katz et al.
patent: 4544418 (1985-10-01), Gibbons
patent: 4560420 (1985-12-01), Lord
patent: 5270266 (1993-12-01), Hirano et al.
patent: 5439850 (1995-08-01), Ozturk et al.
Wolf, Stanley `Si Proc For VLSI Era`, vol. 2, Lattice Press (1990) p. 396.

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