Method of fabricating an isolation region for a semiconductor de

Details Method of fabricating an isolation region for a semiconductor de Method of fabricating an isolation region for a semiconductor de

1995-01-26

1996-10-01

Fourson, George

Fishing, trapping, and vermin destroying

437238, H01L 2176

Patent

active

055610765

ABSTRACT:
The invention provides a method of fabricating a semiconductor device on an SOI substrate having a single crystal silicon substrate, a silicon dioxide film laid on top of the silicon substrate and a single crystal silicon layer laid on top of the silicon dioxide film. The method includes the steps of forming a single crystal silicon island composed of the single crystal silicon layer in a first region in which the semiconductor device is to be fabricated, and selectively forming a low temperature deposition silicon dioxide film in a second region in which the semiconductor device is not to be fabricated in the presence of photoresist, so that the low temperature deposition silicon dioxide film covers side surfaces of the silicon island. The second region turns into an isolation region for electrically separating adjacent semiconductor devices.

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