Process for device fabrication using projection lithography and

Details Process for device fabrication using projection lithography and Process for device fabrication using projection lithography and

1995-01-27

1996-10-01

Chea, Thorl

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

430 5, 430296, 430311, 430396, 430494, G03F 900

Patent

active

055610080

ABSTRACT:
The invention is directed to a method and apparatus of projection lithography in which the contrast introduced into a radiation sensitive material caused by the proximity effect is effectively removed in a single exposure. Patterned radiation is transmitted through a lens system with at least one lens and a back focal plane filter. The back focal plane filter has at least two apertures, an image aperture and a proximity effect correction aperture. Patterned radiation is transmitted through the image aperture and introduces the desired image into the energy sensitive resist material. A portion of the inverse pattern radiation is transmitted through the proximity effect correction aperture and onto the energy sensitive resist material to effectively remove the contrast therein caused by the proximity effect.

REFERENCES:
patent: 5079112 (1992-01-01), Berger et al.
patent: 5130213 (1992-07-01), Berger et al.
patent: 5258246 (1993-11-01), Berger et al.
Owen, G., Rissman, P., "Proximity Effect Correction for Electron Beam Lithography by Equalization of Background Dose", J. Appl. Phys. 54 (6) pp. 3573-3581, (Jun. 1983).

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