Semiconductor laser device which has a double-hetero structure h

Details Semiconductor laser device which has a double-hetero structure h Semiconductor laser device which has a double-hetero structure h

1989-03-14

1990-01-09

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, H01S 319

Patent

active

048933139

ABSTRACT:
In a semiconductor laser device, for emitting a laser beam having a wavelength .lambda., an n-type In.sub.0.5 (Ga.sub.1-x Al.sub.x)P first cladding layer is formed on an n-type GaAs substrate. An undoped InGaP active layer is formed on the first cladding layer and a p-type In.sub.0.5 (Ga.sub.1-x Al.sub.x).sub.0.5 P cladding layer is formed on the active layer. A p-type InGaP cap layer is formed on the second cladding layer and an n-type GaAs current restricting layer is formed on the second cladding layer. The aluminum composition ratio x of the cladding layer is 0.7. The active layer has a thickness of 0.06 .mu.m and the cladding layers have the same thickness H of 0.85 .mu.m. The active layer and the cladding layers have refractive indices n.sub.a and n.sub.c which satisfies the following inequalities:

REFERENCES:
patent: 4792958 (1988-12-01), Ohba et al.
patent: 4799228 (1989-01-01), Nagasaka et al.
patent: 4809287 (1989-02-01), Ohba et al.
Electron Letters, vol. 23, No. 24, pp. 1327-1328; S. Kawata et al., Nov. 19, 1987.

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