Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1990-02-21

1991-06-18

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

050254502

ABSTRACT:
A semiconductor laser device includes an active layer including a bent or a curved light emission portion which is bent or curved toward the device surface side or toward the substrate side, lower and upper cladding layers opposite sides of the active layer, and a diffusion region produced by diffusing impurities to a position within the lower cladding layer or the upper cladding layer forming a pn junction in the respective lower or upper cladding layer to direct current flow in the lower cladding layer into the part of the active layer emitting light.

REFERENCES:
patent: 4667332 (1987-05-01), Mihashi et al.
patent: 4841535 (1989-06-01), Mihashi et al.
patent: 4849372 (1989-07-01), Takemoto

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